Dual N-Channel JFET, 30V, 250mA, 1.5Ω, SOT-363 Product overview: NVTJD4001NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 30V, 250mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 250mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVTJD4001NT1G can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 0.25A SC-88
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Manufacturer: ON Semiconductor
Win Source Part Number: 1084161-NVTJD4001NT1
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-88/SC70-6/SOT-363
Maximum Power Dissipation: 272mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 250mA
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.3nC @ 5V
Max Input Capacitance: 33pF @ 5V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Alternative Parts (Cross-Reference): NTJD4001NT1G; NX3008NBKS; NX3008NBKS,115;
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R
MOSFET 2N-CH 30V 0.25A SC88
MOSFET, AEC-Q101, DUAL NCH, 30V, SOT-363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4V; Threshold Voltage Vgs:1.2V; PowerRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-NVTJD4001NT1G | NVTJD4001NT1G | NVTJD4001NT1GOSCT-ND | 1084161-NVTJD4001NT1G | NVTJD4001NT1G | 598-NVTJD4001NT1G | NVTJD4001NT1G | 14AC4796 |
| Product Name | N-Channel Dual 30V 250mA MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVTJD4001NT1G | MOSFET | Trans MOSFET N-CH 30V 0.25A 6-Pin SC-88 T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, Dual Nch, 30V, Sot-363; Transistor Polarity Onsemi |
| PD | 272 milliwatts | 272 milliwatts | 272 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
