Win Source Part Number: 1201312-NVTFS6H888NT
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVTFS6H888NTAGOSDKR,
Base Product Number: NVTFS6
Drive Voltage (Max Rds On, Min Rds On): 10V
Single N-Channel Power MOSFET 80V, 13A, 55mΩ 1500 / Tape & Reel, 1500-REEL Product overview: NVTFS6H888NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS6H888NTAG can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 4.7A/12A 8WDFN
N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
MOSFET N-CH 80V 4.7A/12A 8WDFN
MOSFET, N-CH, 80V, 12A, 175DEG C, 18W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0457ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1201312-NVTFS6H888NTAG | 278-NVTFS6H888NTAG | NVTFS6H888NTAG | NVTFS6H888NTAGOSCT-ND | NVTFS6H888NTAG | NVTFS6H888NTAG | 84AC7310 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 80V 13A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 12A, 175Deg C, 18W; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 2900 to 18000 milliwatts | 2900 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
