Win Source Part Number: 1115897-NVTFS5C466NL
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVTFS5C466NLTAGOSCT,
Base Product Number: NVTFS5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 40V 51A 8WDFN
AFSM T6 40V LL U8FL
AFSM T6 40V LL U8FL
AFSM T6 40V LL U8FL
MOSFET N-CH 40V 51A 8WDFN
MOSFET, AEC-Q101, N-CH, 40V, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1115897-NVTFS5C466NLTAG | NVTFS5C466NLTAG | 488-NVTFS5C466NLTAGTR-ND | NVTFS5C466NLTAG | NVTFS5C466NLTAG | 18AC0088 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 40V, Wdfn; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 38000 milliwatts | 38000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) |
