Win Source Part Number: 1194165-NVTFS5124PLW
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 18W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVTFS5124PLWFTAGOSDK
Base Product Number: NVTFS5124
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Single P-Channel Power MOSFET -60V, -8A, 260mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NVTFS5124PLWFTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS5124PLWFTAG
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
MOSFET P-CH 60V 2.4A 8WDFN
MOSFET Pwr MOSFET 60V 8A 260mOhm SGL P-CH
MOSFET P-CH 60V 2.4A 8WDFN
MOSFET, P-CH, 60V, 6A, WDFN; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; No. of Pins:8PinsRoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1194165-NVTFS5124PLWFTAG | 278-NVTFS5124PLWFTAG | NVTFS5124PLWFTAGOSCT-ND | NVTFS5124PLWFTAG | NVTFS5124PLWFTAG | NVTFS5124PLWFTAG | 11X3741 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | P-Channel -60V -8A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 60V, 6A, Wdfn; Channel Type Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 3000 to 18000 milliwatts | 3000 milliwatts | 3000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | TO-3 | ||
| Transistor Grade / Operating Range | Automotive |
