Single P-Channel Power MOSFET -60V, -8A, 260mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL Product overview: NVTFS5124PLTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS5124PLTWG can be used for catalog matching and distributor lookup.
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer: ON Semiconductor
Win Source Part Number: 804436-NVTFS5124PLTW
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 3W , 18W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 260mOhm at 3A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 6nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 250pF at 25V
Current - Continuous Drain (Id) at 25°C: 2.4A
Vgs(th) (Maximum) at Id: 2.5V at 250μA
Maximum Vgs: ±20V
MOSFET P-CH 60V 2.4A 8WDFN
MOSFET, P-CH, 60V, 6A, WDFN; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET P-CH 60V 2.4A 8WDFN
Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVTFS5124PLTWG | NVTFS5124PLTWGOSDKR-ND | 804436-NVTFS5124PLTWG | NVTFS5124PLTWG | 60W1864 | NVTFS5124PLTWG | 598-NVTFS5124PLTWG |
| Product Name | P-Channel -60V -8A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - NVTFS5124PLTWG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 60V, 6A, Wdfn; Channel Type Onsemi | Single FETs, MOSFETs | Trans MOSFET P-CH 60V 2.4A Automotive 8-Pin WDFN EP T/R |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| PD | 3000 milliwatts | 3000 to 18000 milliwatts | 3000 milliwatts | 3000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | 8-PowerWDFN | SOT3 | 8-PowerWDFN | TO-3 | 8-PowerWDFN | ||
| Transistor Grade / Operating Range | Automotive |
