P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
MOSFET P-CH 60V 6A 8WDFN
MOSFET P-CH 60V 6A 8WDFN
Single P-Channel Power MOSFET -60V, -14A, 52mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL Product overview: NVTFS5116PLWFTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVTFS5116PLWFTWG
Win Source Part Number: 1008794-NVTFS5116PLW
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NVTFS5116
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH
MOSFET P-CH 60V 6A 8WDFN
MOSFET P-CH 60V 6A 8WDFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 488-NVTFS5116PLWFTWGTR-ND | 278-NVTFS5116PLWFTWG | 1008794-NVTFS5116PLWFTWG | NVTFS5116PLWFTWG | NVTFS5116PLWFTWG | NVTFS5116PLWFTWG |
| Product Name | Single FETs, MOSFETs | P-Channel -60V -14A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | 8-PowerWDFN | SOT3 | 8-PowerWDFN | 25 nC @ 10 V | ||
| Transistor Grade / Operating Range | Automotive | |||||
| PD | 21000 milliwatts | 3200 to 21000 milliwatts | 3200 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
