Power MOSFET, Single N-Channel, 40 V, 1.15Ω, 252 A, 3000-REEL Product overview: NVMYS1D3N04CTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V, 252 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, 252 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMYS1D3N04CTWG can be used for catalog matching and distributor lookup.
N-Channel 40V 43A (Ta), 252A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)
N-Channel 40V 43A (Ta), 252A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)
N-Channel 40V 43A (Ta), 252A (Tc) 3.9W (Ta), 134W (Tc) Surface Mount LFPAK4 (5x6)
Win Source Part Number: 1352932-NVMYS1D3N04C
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 32 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK4 (5x6)
Base Product Number: NVMYS1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 252A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4855 pF @ 25 V
Power Dissipation (Max): 3.9W (Ta), 134W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
TRENCH 6 40V SL NFET
MOSFET, N-CH, 40V, 252A, 175DEG C, 134W; Transistor Polarity:N Channel; Continuous Drain Current Id:252A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; PowerRoHS Compliant: Yes
TRENCH 6 40V SL NFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVMYS1D3N04CTWG | NVMYS1D3N04CTWGOSCT-ND | 1352932-NVMYS1D3N04CTWG | NVMYS1D3N04CTWG | 84AC7308 | NVMYS1D3N04CTWG | NVMYS1D3N04CTWG |
| Product Name | N-Channel 40 V 252 A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 252A, 175Deg C, 134W; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT-1023, 4-LFPAK | SOT3 | SOT-1023, 4-LFPAK | TO-3 | SOT-1023, 4-LFPAK | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
