Win Source Part Number: 1278217-NVMYS021N06C
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 16µA
Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
Package / Case: SOT-1023, 4-LFPAK
Supplier Device Package: LFPAK4 (5x6)
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVMYS021N06CLTWGOSDK
Base Product Number: NVMYS021
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power MOSFET 60 V, 21mΩ, 27 A, Single N-Channel, 3000-REEL Product overview: NVMYS021N06CLTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V, 27 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, 27 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMYS021N06CLTWG
N-Channel 60V 9.8A (Ta), 27A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
N-Channel 60V 9.8A (Ta), 27A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
N-Channel 60V 9.8A (Ta), 27A (Tc) 3.8W (Ta), 28W (Tc) Surface Mount LFPAK4 (5x6)
MOSFET N-CH 60V 9.8A/27A 4LFPAK
MOSFET 40V 0.9Ohm 322A Single N-Channel
MOSFET N-CH 60V 9.8A/27A 4LFPAK
SINGLE MOSFET TRANSISTORS ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278217-NVMYS021N06CLTWG | 278-NVMYS021N06CLTWG | NVMYS021N06CLTWGOSDKR-ND | NVMYS021N06CLTWG | NVMYS021N06CLTWG | NVMYS021N06CLTWG | 39AH9079 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 60 V 27 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single Mosfet Transistors Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SOT3 | SOT-1023, 4-LFPAK | SOT-1023, 4-LFPAK | Surface Mount | TO-3 | ||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Transistor Grade / Operating Range | Automotive | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
