N-Channel 40V 51A (Ta), 430A (Tc) 3.9W (Ta), 273W (Tc) Surface Mount 8-DFNW (8.3x8.4)
N-Channel 40V 51A (Ta), 430A (Tc) 3.9W (Ta), 273W (Tc) Surface Mount 8-DFNW (8.3x8.4)
N-Channel 40V 51A (Ta), 430A (Tc) 3.9W (Ta), 273W (Tc) Surface Mount 8-DFNW (8.3x8.4)
Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A, 3000-REEL Product overview: NVMTS0D7N04CTXG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40 V, 420 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40 V, 420 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMTS0D7N04CTXG can be used for catalog matching and distributor lookup.
Manufacturer: onsemi
Win Source Part Number: 1324445-NVMTS0D7N04C
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 51A, 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.9W, 273W (Tc)
Supplier Device Package: 8-DFNW (8.3x8.4)
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9281 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN
ECCN: EAR99
Fake Threat In the Open Market: 73
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVMTS0D7N04CTXGOSCT,
Base Product Number: NVMTS0
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 40V 51A/430A 8DFNW
MOSFET, N-CH, 40V, 430A, 175DEG C, 273W; Transistor Polarity:N Channel; Continuous Drain Current Id:430A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVMTS0D7N04CTXGOSDKR-ND | 278-NVMTS0D7N04CTXG | 1324445-NVMTS0D7N04CTXG | NVMTS0D7N04CTXG | 84AC7306 |
| Product Name | Single FETs, MOSFETs | N-Channel 40 V 420 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 430A, 175Deg C, 273W; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel | |||
| Package Type | 8-PowerTDFN | SOT3; 8-PowerTDFN | 8-PowerTDFN | TO-3 | |
| Transistor Grade / Operating Range | Automotive | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |
