onsemi Single FETs, MOSFETs NVMFWS3D0P04M8LT1G

P-Channel 40V 28A (Ta), 183A (Tc) 3.9W (Ta), 171W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

MV8 P INITIAL PROGRAM

MV8 P INITIAL PROGRAM

Win Source Part Number: 1349846-NVMFWS3D0P04M8LT1G
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Power Dissipation (Max): 3.9W (Ta) , 171W (Tc)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta) , 183A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A,10V
Vgs(th) (Max) @ Id: 2.4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5827 pF @ 20 V

MV8 P INITIAL PROGRAM Product overview: NVMFWS3D0P04M8LT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFWS3D0P04M8LT1G can be used for catalog matching and distributor lookup.