Win Source Part Number: 1019046-NVMFS6H864NT
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVMFS6H864NT1GOSCT,N
Base Product Number: NVMFS6
Drive Voltage (Max Rds On, Min Rds On): 10V
Power MOSFET 80 V, 23A, 32 mΩ, Single N-Channel, SO8-FL, 1500-REEL Product overview: NVMFS6H864NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80 V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80 V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS6H864NT1G can be used for catalog matching and distributor lookup.
N-Channel 80V 6.7A (Ta), 21A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 6.7A (Ta), 21A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 6.7A (Ta), 21A (Tc) 3.5W (Ta), 33W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET, N-CH, 80V, 21A, 175DEG C, 33W; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0269ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 80V 6.7A/21A 5DFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1019046-NVMFS6H864NT1G | 278-NVMFS6H864NT1G | NVMFS6H864NT1GOSTR-ND | 84AC7302 | NVMFS6H864NT1G | NVMFS6H864NT1G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel 80 V 23A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 21A, 175Deg C, 33W; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||||
| PD | 3500 to 33000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | ||||
| Package Type | SOT3 | 8-PowerTDFN, 5 Leads | TO-3 | Surface Mount |
