MOSFET N-CH 80V 23A/157A 5DFN
N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Alternative Parts (Cross-Reference): Cross
Manufacturer: onsemi
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Single N-Channel Power MOSFET 80V , 157 A, 2.8 mΩ 1500 / Tape & Reel, 1500-REEL Product overview: NVMFS6H801NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 157 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 157 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS6H801NT1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 23A/157A 5DFN
MOSFET, N-CH, 80V, 157A, 175DEG C, 166W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:157A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVMFS6H801NT1G | 1784450P | 1784450 | NVMFS6H801NT1GOSCT-ND | 278-NVMFS6H801NT1G | NVMFS6H801NT1G | NVMFS6H801NT1G | 65AC5192 | |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | N-Channel 80V 157 A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 157A, 175Deg C, 166W; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 80 volts | ||||||||
| IDSS | 23000 milliamps | 157000 milliamps | |||||||
| PD | 3800 milliwatts |
