N-Channel 60V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 22A (Ta), 100A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Single N-Channel Power MOSFET 60V, 100A, 4mΩ 1500 / Tape & Reel, 1500-REEL Product overview: NVMFS5C645NLAFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5C645NLAFT1
MOSFET N-CH 60V 22A/100A 5DFN
Win Source Part Number: 1107729-NVMFS5C645NL
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: ,NVMFS5C645NLAFT1G-N
Base Product Number: NVMFS5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 22A/100A 5DFN
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 488-NVMFS5C645NLAFT1GDKR-ND | 278-NVMFS5C645NLAFT1G | NVMFS5C645NLAFT1G | 1107729-NVMFS5C645NLAFT1G | NVMFS5C645NLAFT1G | NVMFS5C645NLAFT1G |
| Product Name | Single FETs, MOSFETs | N-Channel 60V 100A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | SOT3 | 8-PowerTDFN, 5 Leads | ||
| Transistor Grade / Operating Range | Automotive | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
