Single N-Channel Power MOSFET 60V, 287A, 1.2mΩ 1500 / Tape & Reel. Wettable Flanks, 1500-REEL Product overview: NVMFS5C604NLWFAFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 287A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 287A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5C604NLWFAF
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Manufacturer: onsemi
Win Source Part Number: 1324091-NVMFS5C604NL
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 200W (Tc)
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN, 5 Leads
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVMFS5C604NLWFAFT1GO
Base Product Number: NVMFS5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET, AEC-Q101, N-CH, 60V, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:287A; Drain Source Voltage Vds:60V; On Resistance Rds(on):930µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 60V 287A 5DFN
MOSFET N-CH 60V 287A 5DFN
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVMFS5C604NLWFAFT1G | NVMFS5C604NLWFAFT1GOSTR-ND | 1324091-NVMFS5C604NLWFAFT1G | 18AC0087 | NVMFS5C604NLWFAFT1G | NVMFS5C604NLWFAFT1G | NVMFS5C604NLWFAFT1G |
| Product Name | N-Channel 60V 287A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 60V, Dfn; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerTDFN, 5 Leads | SOT3; 8-PowerTDFN, 5 Leads | TO-3 | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| PD | 200000 milliwatts | 200000 milliwatts |
