The NVMFS5C604NLAFT1G is an N-channel MOSFET designed for power applications, featuring a compact 5x6 mm footprint suitable for space-constrained designs. It has a maximum drain-to-source voltage of 60 V and can handle continuous drain currents of up to 287 A at 25¬8C, making it suitable for high-current applications. The device exhibits a low on-resistance of 1.2 mOc at a gate-source voltage of 10 V and a drain current of 50 A, which helps minimize conduction losses. This MOSFET is AEC-Q101 qualified, indicating its reliability for automotive applications, and is compliant with RoHS standards. It also offers low gate charge and capacitance values, which contribute to reduced driver losses. The operating temperature range is extensive, from -55¬8C to +175¬8C, allowing for versatility in various environments. The part is packaged in a tape and reel format, facilitating automated assembly processes. Engineers looking for a high-performance MOSFET for automotive or other demanding applications may find this component suitable due to its robust specifications and compliance with industry standards.
Single N-Channel Power MOSFET 60V, 287A, 1.2mΩ 1500 / Tape & Reel, 1500-REEL Product overview: NVMFS5C604NLAFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 287A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 287A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5C604NLAFT1
Win Source Part Number: 1278216-NVMFS5C604NL
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 287A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 200W (Tc)
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVMFS5C604NLAFT1GOSC
Base Product Number: NVMFS5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 287A 5DFN
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 60V 287A (Tc) 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET N-CH 60V 287A 5DFN
MOSFET, AEC-Q101, N-CH, 60V, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:287A; Drain Source Voltage Vds:60V; On Resistance Rds(on):930µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVMFS5C604NLAFT1G | 1278216-NVMFS5C604NLAFT1G | NVMFS5C604NLAFT1G | NVMFS5C604NLAFT1GOSCT-ND | NVMFS5C604NLAFT1G | NVMFS5C604NLAFT1G | 18AC0086 |
| Product Name | N-Channel 60V 287A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 60V, Dfn; Transistor Polarity Onsemi |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | SOT3 | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 4.5V, 10V | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts |
