onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G NVMFS5832NLWFT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084140-NVMFS5832NLW FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G - 1084140-NVMFS5832NLWFT1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NVMFS5832NLWFT1G-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFS5832NLWFT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084140-NVMFS5832NLW FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G - 1084140-NVMFS5832NLWFT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G
1084140-NVMFS5832NLWFT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G 1084140-NVMFS5832NLWFT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1084140-NVMFS5832NLW FT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 2700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084140-NVMFS5832NLWFT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NVMFS5832NLWFT1G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVMFS5832NLWFT1G-ND
Single FETs, MOSFETs NVMFS5832NLWFT1G-ND
N-Channel 40V 21A (Ta) 3.7W (Ta), 127W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 40V 21A (Ta) 3.7W (Ta), 127W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NVMFS5832NLWFT1G
MOSFET NVMFS5832NLWFT1G
MOSFET Pwr MOSFET 40V 120A 4.2mOhm SGL N-CH

MOSFET Pwr MOSFET 40V 120A 4.2mOhm SGL N-CH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFS5832NLWFT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVMFS5832NLWFT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFS5832NLWFT1G
MOSFET N-CH 40V 21A 5DFN

MOSFET N-CH 40V 21A 5DFN

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1084140-NVMFS5832NLWFT1G NVMFS5832NLWFT1G-ND NVMFS5832NLWFT1G NVMFS5832NLWFT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLWFT1G Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 3700 to 127000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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