Power MOSFET 40V, 120A, 4.2 mOhm, Single N-Channel, SO8-FL, Logic Level., DFN5 5X6, 1.27P (SO 8FL), 1500-REEL Product overview: NVMFS5832NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 120A, 4.2 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 120A, 4.2 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMFS5832NLT1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 120A SO8FL
Manufacturer: ON Semiconductor
Win Source Part Number: 209384-NVMFS5832NLT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 127W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 21A (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 2700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-CH 40V 120A SO8FL
MOSFET NFET SO8FL 40V 120A 4.2MO
MOSFET N-CH 40V 120A SO8FL
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVMFS5832NLT1G | 488-NVMFS5832NLT1GTR-ND | 209384-NVMFS5832NLT1G | NVMFS5832NLT1G | NVMFS5832NLT1G | NVMFS5832NLT1G |
| Product Name | N-Channel 40V 120A 4.2 mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFS5832NLT1G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| PD | 3700 milliwatts | 3700 to 127000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel; N-Channel |
