The NVMFD5C668NL is a dual N-channel MOSFET designed for applications requiring high efficiency and compact design. It features a maximum drain-to-source voltage of 60V and a continuous drain current rating of 68A at 25¬8C, making it suitable for high-power applications. The device has a low on-resistance of 6.5 mOc at a gate-source voltage of 10V, which helps minimize conduction losses. It also offers low total gate charge, reducing driver losses during operation. This MOSFET is AEC-Q101 qualified, indicating its suitability for automotive applications, and is compliant with RoHS standards. The package dimensions are compact, measuring 5x6 mm, which is advantageous for space-constrained designs. Additionally, the part is available with a wettable flank option for enhanced optical inspection, facilitating easier assembly and quality control. The operating temperature range is from -55¬8C to +175¬8C, providing versatility in various environmental conditions.
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Win Source Part Number: 1356921-NVMFD5C668NL
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number: NVMFD5
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 3W (Ta), 57.5W (Tc)
Configuration: 2 N-Channel (Dual)
MOSFET, DUAL N-CH, 60V, 68A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
MOSFET 2N-CH 60V 15.5A/68A 8DFN
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NVMFD5C668NLT1GOSCT-ND | NVMFD5C668NLT1G | 1356921-NVMFD5C668NLT1G | NVMFD5C668NLT1G | 62AC7372 | NVMFD5C668NLT1G |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | MOSFET | Mosfet, Dual N-Ch, 60V, 68A, Dfn; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | 8-PowerTDFN | 8-PowerTDFN | SOT3 | TO-3 | 8-PowerTDFN | |
| Transistor Grade / Operating Range | Automotive | |||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts |
