The NVMFD5C668NL is a dual N-channel MOSFET designed for applications requiring high efficiency and compact design. It features a maximum drain-to-source voltage of 60V and a continuous drain current rating of 68A at 25¬8C, making it suitable for high-power applications. The device has a low on-resistance of 6.5 mOc at a gate-source voltage of 10V, which helps minimize conduction losses. It also offers low total gate charge, reducing driver losses during operation. This MOSFET is AEC-Q101 qualified, indicating its suitability for automotive applications, and is compliant with RoHS standards. The package dimensions are compact, measuring 5x6 mm, which is advantageous for space-constrained designs. Additionally, the part is available with a wettable flank option for enhanced optical inspection, facilitating easier assembly and quality control. The operating temperature range is from -55¬8C to +175¬8C, providing versatility in various environmental conditions.
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 15.5A (Ta), 68A (Tc) 3W (Ta), 57.5W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Power MOSFET 60 V, 68 A, 6.5 mΩ, Dual N−Channel, 1500-REEL Product overview: NVMFD5C668NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60 V, 68 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60 V, 68 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5C668NLT1G can be used for catalog matching and distributor lookup.
Win Source Part Number: 1356921-NVMFD5C668NL
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number: NVMFD5
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 25V
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power - Max: 3W (Ta), 57.5W (Tc)
Configuration: 2 N-Channel (Dual)
MOSFET 2N-CH 60V 15.5A/68A 8DFN
MOSFET, DUAL N-CH, 60V, 68A, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVMFD5C668NLT1GOSCT-ND | 289-NVMFD5C668NLT1G | NVMFD5C668NLT1G | 1356921-NVMFD5C668NLT1G | NVMFD5C668NLT1G | NVMFD5C668NLT1G | 62AC7372 |
| Product Name | FET, MOSFET Arrays | Dual 60 V 68 A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 60V, 68A, Dfn; Transistor Polarity Onsemi |
| Package Type | 8-PowerTDFN | 8-PowerTDFN | SOT3 | 8-PowerTDFN | TO-3 | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
