Win Source Part Number: 1178323-NVMFD5C650NL
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Power - Max: 3.5W (Ta), 125W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVMFD5C650NLWFT1GOSD
Base Product Number: NVMFD5
Dual N-Channel Power MOSFET 60V, 111A, 4.2mΩ, 1500-REEL Product overview: NVMFD5C650NLWFT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 111A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 111A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5C650NLWFT1
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:111A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes
MOSFET 2N-CH 60V 111A S08FL
MOSFET 2N-CH 60V 21A/111A 8DFN
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1178323-NVMFD5C650NLWFT1G | 289-NVMFD5C650NLWFT1G | NVMFD5C650NLWFT1GOSDKR-ND | NVMFD5C650NLWFT1G | 48AC1749 | NVMFD5C650NLWFT1G | NVMFD5C650NLWFT1G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | N-Channel Dual 60V 111A MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn-8; Transistor Polarity Onsemi | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | Automotive | ||
| Transistor Grade / Operating Range | Automotive | ||||||
| IDSS | 111000 milliamps | 21000 milliamps |
