MOSFET 2N-CH 60V 111A S08FL
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Alternative Parts (Cross-Reference): Cross
Manufacturer: onsemi
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Active
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Dual N-Channel Power MOSFET 60V, 111A, 4.2mΩ, 1500-REEL Product overview: NVMFD5C650NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 111A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 111A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5C650NLT1G can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 21A/111A 8DFN
MOSFET, AEC-Q101, DUAL N-CH, 60V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:111A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVMFD5C650NLT1G | NVMFD5C650NLT1GOSDKR-ND | 289-NVMFD5C650NLT1G | NVMFD5C650NLT1G | NVMFD5C650NLT1G | 48AC1748 | |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays | N-Channel Dual 60V 111A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 60V, Dfn-8; Transistor Polarity Onsemi |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | ||||||
| IDSS | 21000 milliamps | 111000 milliamps | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
