onsemi FET, MOSFET Arrays NVMFD5C478NLT1G

Description
40V 14.5 MOHM T8 S08FL DU
Request a Quote Datasheet
Description
40V 14.5 MOHM T8 S08FL DU
Request a Quote Datasheet

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Product
Description
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FET, MOSFET Arrays - NVMFD5C478NLT1G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NVMFD5C478NLT1G
FET, MOSFET Arrays NVMFD5C478NLT1G
40V 14.5 MOHM T8 S08FL DU

40V 14.5 MOHM T8 S08FL DU

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1014180-NVMFD5C478NLT1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1014180-NVMFD5C478NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1014180-NVMFD5C478NLT1G
Win Source Part Number: 1014180-NVMFD5C478NL T1G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel Standard Package: 1,500 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Power - Max: 3.1W (Ta), 23W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: NVMFD5C478NLT1G-ND,N VMFD5C478NLT1GOSCT,N VMFD5C478NLT1GOSDKR, NVMFD5C478NLT1GOSTR Base Product Number: NVMFD5

Win Source Part Number: 1014180-NVMFD5C478NLT1G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 1,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power - Max: 3.1W (Ta), 23W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: NVMFD5C478NLT1G-ND,NVMFD5C478NLT1GOSCT,NVMFD5C478NLT1GOSDKR,NVMFD5C478NLT1GOSTR
Base Product Number: NVMFD5

Buy Now Datasheet
FET, MOSFET Arrays - NVMFD5C478NLT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NVMFD5C478NLT1GOSCT-ND
FET, MOSFET Arrays NVMFD5C478NLT1GOSCT-ND
Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Buy Now Datasheet
FET, MOSFET Arrays - NVMFD5C478NLT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NVMFD5C478NLT1GOSTR-ND
FET, MOSFET Arrays NVMFD5C478NLT1GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Buy Now Datasheet
FET, MOSFET Arrays - NVMFD5C478NLT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NVMFD5C478NLT1GOSDKR-ND
FET, MOSFET Arrays NVMFD5C478NLT1GOSDKR-ND
Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Mosfet Array 2 N-Channel (Dual) 40V 10.5A (Ta), 29A (Tc) 3.1W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Buy Now Datasheet
Singapore
N-Channel Dual 40 V 29 A MOSFET Transistor
289-NVMFD5C478NLT1G
N-Channel Dual 40 V 29 A MOSFET Transistor 289-NVMFD5C478NLT1G
Dual N-Channel Power MOSFET 40 V, 29 A, 14.5 mΩ, 1500-REEL Product overview: NVMFD5C478NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 40 V, 29 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40 V, 29 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5C478NLT1G can be used for catalog matching and distributor lookup.

Dual N-Channel Power MOSFET 40 V, 29 A, 14.5 mΩ, 1500-REEL Product overview: NVMFD5C478NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 40 V, 29 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40 V, 29 A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5C478NLT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn; Transistor Polarity Onsemi - 62AC7370 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn; Transistor Polarity Onsemi
62AC7370
Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn; Transistor Polarity Onsemi 62AC7370
MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes

MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8

MOSFET 40V 14.5 MOHM T8 SO-8FL DUAL DFN-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFD5C478NLT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVMFD5C478NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFD5C478NLT1G
MOSFET 2N-CH 40V 10.5A 8DFN

MOSFET 2N-CH 40V 10.5A 8DFN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NVMFD5C478NLT1G 1014180-NVMFD5C478NLT1G NVMFD5C478NLT1GOSCT-ND 289-NVMFD5C478NLT1G 62AC7370 NVMFD5C478NLT1G NVMFD5C478NLT1G
Product Name FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays FET, MOSFET Arrays N-Channel Dual 40 V 29 A MOSFET Transistor Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn; Transistor Polarity Onsemi MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 10500 milliamps 29000 milliamps
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F)
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