MOSFET 2N-CH 40V 36A S08FL
Mosfet Array 2 N-Channel (Dual) 40V 11A (Ta), 36A (Tc) 3W (Ta), 24W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 40V 11A (Ta), 36A (Tc) 3W (Ta), 24W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Mosfet Array 2 N-Channel (Dual) 40V 11A (Ta), 36A (Tc) 3W (Ta), 24W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Manufacturer: ON Semiconductor
Win Source Part Number: 853017-NVMFD5C470NLW
Series: Automotive, AEC-Q101
Features: Mosfet Array
Package: Reel - TR
Family Name: NVMFD5
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 1500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVMFD5C470NLWFT1GOST
MOSFET, AEC-Q101, DUAL N-CH, 40V, DFN-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; RoHS Compliant: Yes
MOSFET 2N-CH 40V 11A/36A 8DFN
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NVMFD5C470NLWFT1G | NVMFD5C470NLWFT1GOSDKR-ND | 853017-NVMFD5C470NLWFT1G | NVMFD5C470NLWFT1G | 48AC1747 | NVMFD5C470NLWFT1G |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5C470NLWFT1G | MOSFET | Mosfet, Aec-Q101, Dual N-Ch, 40V, Dfn-8; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 11000 milliamps | 36000 milliamps | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
