onsemi FET, MOSFET Arrays NVMFD5877NLT1G

Description
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NVMFD5877NLT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NVMFD5877NLT1GOSTR-ND
FET, MOSFET Arrays NVMFD5877NLT1GOSTR-ND
Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Mosfet Array 2 N-Channel (Dual) 60V 6A 3.2W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

Buy Now Datasheet
Singapore, Singapore
Dual 60V 17A MOSFET Transistor
289-NVMFD5877NLT1G
Dual 60V 17A MOSFET Transistor 289-NVMFD5877NLT1G
Dual N-Ch MOSFET 60V 17A 39mΩ DFN8 5x6 Product overview: NVMFD5877NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 17A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5877NLT1G can be used for catalog matching and distributor lookup.

Dual N-Ch MOSFET 60V 17A 39mΩ DFN8 5x6 Product overview: NVMFD5877NLT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 60V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 17A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD5877NLT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5877NLT1G - 790869-NVMFD5877NLT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5877NLT1G
790869-NVMFD5877NLT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5877NLT1G 790869-NVMFD5877NLT1G
Manufacturer: ON Semiconductor Win Source Part Number: 790869-NVMFD5877NLT1 G Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: 8-PowerTDFN Mounting: SMD FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Current - Continuous Drain (Id) @ 25°C: 6A Power - Max: 3.2W Family Name: NVMFD5877NL Categories: Discrete Semiconductor Products Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetr ical) Drain Source Voltage: 60V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 540pF @ 25V Rds On (Maximum) @ Id, Vgs: 39 mOhm @ 7.5A, 10V Alternative Parts (Cross-Reference): NVMFD5877NLT3G; Introduction Date: February 25, 2011 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 790869-NVMFD5877NLT1G
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Current - Continuous Drain (Id) @ 25°C: 6A
Power - Max: 3.2W
Family Name: NVMFD5877NL
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 540pF @ 25V
Rds On (Maximum) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
Alternative Parts (Cross-Reference): NVMFD5877NLT3G;
Introduction Date: February 25, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVMFD5877NLT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVMFD5877NLT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVMFD5877NLT1G
MOSFET 2N-CH 60V 6A 8DFN

MOSFET 2N-CH 60V 6A 8DFN

Supplier's Site
Mosfet, Dual N Ch, 60V, 17A; Transistor Polarity Onsemi - 81Y7074 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Ch, 60V, 17A; Transistor Polarity Onsemi
81Y7074
Mosfet, Dual N Ch, 60V, 17A; Transistor Polarity Onsemi 81Y7074
MOSFET, DUAL N CH, 60V, 17A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

MOSFET, DUAL N CH, 60V, 17A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 16-128MHZ3.3VGPEMI

MOSFET 16-128MHZ3.3VGPEMI

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FET, MOSFET Arrays - NVMFD5877NLT1G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NVMFD5877NLT1G
FET, MOSFET Arrays NVMFD5877NLT1G
MOSFET 2N-CH 60V 6A 8SOIC

MOSFET 2N-CH 60V 6A 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NVMFD5877NLT1GOSTR-ND 289-NVMFD5877NLT1G 790869-NVMFD5877NLT1G NVMFD5877NLT1G 81Y7074 NVMFD5877NLT1G NVMFD5877NLT1G
Product Name FET, MOSFET Arrays Dual 60V 17A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMFD5877NLT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Dual N Ch, 60V, 17A; Transistor Polarity Onsemi MOSFET FET, MOSFET Arrays
Package Type 8-PowerTDFN SOT3 Automotive TO-3 8-PowerTDFN
Transistor Grade / Operating Range Automotive
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
PD 3200 milliwatts
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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