onsemi 60V 7A 19A MOSFET Transistor NVMFD030N06CT1G

MOSFET 2N-CH 60V 7A/19A 8DFN Product overview: NVMFD030N06CT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 7A, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 7A, 19A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NVMFD030N06CT1G can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 7A 8DFN

Mosfet Array 2 N-Channel (Dual) 60V 7A (Ta), 19A (Tc) 3.2W (Ta), 23W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)

MOSFET 2N-CH 60V 7A 8DFN

Win Source Part Number: 1017650-NVMFD030N06CT1G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 1,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Power - Max: 3.2W (Ta), 23W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NVMFD030N06CT1GTR
Base Product Number: NVMFD030