onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVMD3P03R2G NVMD3P03R2G

Manufacturer: ON Semiconductor
Win Source Part Number: 1084135-NVMD3P03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Maximum Power Dissipation: 730mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.34A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 750pF @ 24V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Dual P-Channel Power MOSFET -30V, -3.05A, 85mΩ Power MOSFET -30V -3.05A 85 mOhm Dual P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NVMD3P03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, -30V, -3.05A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, -30V, -3.05A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVMD3P03R2G can be used for catalog matching and distributor lookup.