onsemi Single FETs, MOSFETs NVHL080N120SC1

N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

Manufacturer: onsemi
Win Source Part Number: 1324455-NVHL080N120SC1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVHL080N120SC1OS
Base Product Number: NVHL080
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant

SICFET N-CH 1200V 44A TO247-3

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NVHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVHL080N120SC1 can be used for catalog matching and distributor lookup.