SICFET N-CH 1200V 44A TO247-3
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3
Manufacturer: onsemi
Win Source Part Number: 1324455-NVHL080N120S
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVHL080N120SC1OS
Base Product Number: NVHL080
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247 ROHS COMPLIANT: YES
SICFET N-CH 1200V 44A TO247-3
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NVHL080N120SC1 | NVHL080N120SC1OS-ND | 1324455-NVHL080N120SC1 | 99AC9420 | NVHL080N120SC1 | NVHL080N120SC1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts | |||||
| IDSS | 44000 milliamps | |||||
| PD | 348000 milliwatts |
