onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NVHL080N120SC1

Description
Manufacturer: onsemi Win Source Part Number: 1324455-NVHL080N120S C1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 450 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: NVHL080N120SC1OS Base Product Number: NVHL080 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324455-NVHL080N120SC1 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NVHL080N120SC1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - NVHL080N120SC1OS-ND - DigiKey
    DigiKey
  • Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi - 99AC9420 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVHL080N120SC1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: onsemi Win Source Part Number: 1324455-NVHL080N120S C1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 450 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: NVHL080N120SC1OS Base Product Number: NVHL080 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324455-NVHL080N120SC1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324455-NVHL080N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324455-NVHL080N120SC1
Manufacturer: onsemi Win Source Part Number: 1324455-NVHL080N120S C1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 450 Mounting: Through Hole Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Power Dissipation (Max): 348W (Tc) Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: NVHL080N120SC1OS Base Product Number: NVHL080 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 20V RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1324455-NVHL080N120SC1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NVHL080N120SC1OS
Base Product Number: NVHL080
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200 V MOSFET Transistor
278-NVHL080N120SC1
1200 V MOSFET Transistor 278-NVHL080N120SC1
Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NVHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVHL080N120SC1 can be used for catalog matching and distributor lookup.

Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L, 450-TUBE Product overview: NVHL080N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVHL080N120SC1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NVHL080N120SC1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVHL080N120SC1
Single FETs, MOSFETs NVHL080N120SC1
SICFET N-CH 1200V 44A TO247-3

SICFET N-CH 1200V 44A TO247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - NVHL080N120SC1OS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVHL080N120SC1OS-ND
Single FETs, MOSFETs NVHL080N120SC1OS-ND
N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

N-Channel 1200V 44A (Tc) 348W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi - 99AC9420 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi
99AC9420
Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi 99AC9420
MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247 ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 1.2KV, TO-247 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVHL080N120SC1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVHL080N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVHL080N120SC1
SICFET N-CH 1200V 44A TO247-3

SICFET N-CH 1200V 44A TO247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NVHL080N120SC1
MOSFET NVHL080N120SC1
MOSFET SIC MOS 80MW 120

MOSFET SIC MOS 80MW 120

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1324455-NVHL080N120SC1 278-NVHL080N120SC1 NVHL080N120SC1 NVHL080N120SC1OS-ND 99AC9420 NVHL080N120SC1 NVHL080N120SC1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1200 V MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 1.2Kv, To-247 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
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