Manufacturer: onsemi
Win Source Part Number: 1324096-NVHL040N120S
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Power Dissipation (Max): 348W (Tc)
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 78
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-NVHL040N120SC1
Base Product Number: NVHL040
Drive Voltage (Max Rds On, Min Rds On): 20V
RoHS Status: ROHS3 Compliant
N-Channel 1200V 60A (Tc) 348W (Tc) Through Hole TO-247-3
Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L, 450-TUBE Product overview: NVHL040N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVHL040N120SC1 can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 60A, TO-247 ROHS COMPLIANT: YES
SICFET N-CH 1200V 60A TO247-3
SICFET N-CH 1200V 60A TO247-3
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324096-NVHL040N120SC1 | 2025744 | 2025745P | 5556-NVHL040N120SC1-ND | 278-NVHL040N120SC1 | 74AH4857 | NVHL040N120SC1 | NVHL040N120SC1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | 1200 V MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 60A, To-247 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; To-247 | TO-247; TO-247 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Transistor Technology / Material | Sic | Silicon Carbide | SiCFET (Silicon Carbide) | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| Number of units in IC | 1 |
