onsemi Single FETs, MOSFETs NVH4L080N120SC1

Description
SICFET N-CH 1200V 29A TO247-4
Request a Quote Datasheet
Description
SICFET N-CH 1200V 29A TO247-4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NVH4L080N120SC1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVH4L080N120SC1
Single FETs, MOSFETs NVH4L080N120SC1
SICFET N-CH 1200V 29A TO247-4

SICFET N-CH 1200V 29A TO247-4

Supplier's Site Datasheet
Single FETs, MOSFETs - 5556-NVH4L080N120SC1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NVH4L080N120SC1-ND
Single FETs, MOSFETs 5556-NVH4L080N120SC1-ND
N-Channel 1200V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L

N-Channel 1200V 29A (Tc) 170mW (Tc) Through Hole TO-247-4L

Buy Now Datasheet
Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant Onsemi - 74AH4861 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant Onsemi
74AH4861
Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant Onsemi 74AH4861
MOSFET, N-CH, 1.2KV, 29A, TO-247 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.2KV, 29A, TO-247 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVH4L080N120SC1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVH4L080N120SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVH4L080N120SC1
SICFET N-CH 1200V 29A TO247-4

SICFET N-CH 1200V 29A TO247-4

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NVH4L080N120SC1 5556-NVH4L080N120SC1-ND 74AH4861 NVH4L080N120SC1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 1.2Kv, 29A, To-247 Rohs Compliant Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 1200 volts
IDSS 29000 milliamps
PD 170000 milliwatts
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