The Onsemi NVH4L022N120M3S is an N-channel MOSFET designed for high-voltage applications, featuring a maximum drain-to-source voltage of 1200 V and a continuous drain current rating of 68 A at 25°C. It has a low on-resistance of 22 mΩ at a gate-source voltage of 18 V, which contributes to efficient power management. The device is characterized by a total gate charge of 151 nC and a low output capacitance of 244 pF, enabling high-speed switching capabilities. This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications such as on-board chargers, DC-DC converters for electric and hybrid vehicles, and traction inverters. It is also 100% avalanche tested and compliant with RoHS standards. The operating temperature range extends from -55°C to +175°C, ensuring reliability in various environmental conditions. The device is packaged in a TO-247-4L configuration, facilitating easy integration into existing designs.
SIC MOS TO247-4L 22MOHM 1200V Product overview: NVH4L022N120M3S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 22MOHM, 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 22MOHM, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVH4L022N120M3S can be used for catalog matching and distributor lookup.
N-Channel 1200V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
Manufacturer: onsemi
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
MOSFET, N-CH, 1.2KV, 68A, TO-247; MOSFET Module Configuration:Single
SIC MOS TO247-4L 22MOHM 1200V
SIC MOS TO247-4L 22MOHM 1200V
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVH4L022N120M3S | 5556-NVH4L022N120M3S-ND | 81AJ0295 | NVH4L022N120M3S | NVH4L022N120M3S | |
| Product Name | 22MOHM 1200V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 68A, To-247; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 1200 volts | 1200 volts | ||||
| Transconductance | 0.0340 kS | |||||
| PD | 352 milliwatts | 352000 milliwatts | 352000 milliwatts |
