The Onsemi NVH4L022N120M3S is an N-channel MOSFET designed for high-voltage applications, featuring a maximum drain-to-source voltage of 1200 V and a continuous drain current rating of 68 A at 25¬8C. It has a low on-resistance of 22 mOc at a gate-source voltage of 18 V, which contributes to efficient power management. The device is characterized by a total gate charge of 151 nC and a low output capacitance of 244 pF, enabling high-speed switching capabilities. This MOSFET is AEC-Q101 qualified, making it suitable for automotive applications such as on-board chargers, DC-DC converters for electric and hybrid vehicles, and traction inverters. It is also 100% avalanche tested and compliant with RoHS standards. The operating temperature range extends from -55¬8C to +175¬8C, ensuring reliability in various environmental conditions. The device is packaged in a TO-247-4L configuration, facilitating easy integration into existing designs.
Manufacturer: onsemi
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
N-Channel 1200V 68A (Tc) 352W (Tc) Through Hole TO-247-4L
SIC MOS TO247-4L 22MOHM 1200V Product overview: NVH4L022N120M3S from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 22MOHM, 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 22MOHM, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVH4L022N120M3S can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 1.2KV, 68A, TO-247; MOSFET Module Configuration:Single
SIC MOS TO247-4L 22MOHM 1200V
SIC MOS TO247-4L 22MOHM 1200V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 5556-NVH4L022N120M3S-ND | 278-NVH4L022N120M3S | 81AJ0295 | NVH4L022N120M3S | NVH4L022N120M3S | |
| Product Name | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | Single FETs, MOSFETs | 22MOHM 1200V MOSFET Transistor | Mosfet, N-Ch, 1.2Kv, 68A, To-247; Mosfet Module Configuration Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT3 | TO-247; TO-247-4 | Tube | TO-3; TO-247 | Through Hole | TO-247; TO-247-4 |
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||||
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement |
