onsemi NVG800A75L4DSB

Description
Insulated Gate Bipolar Transistor
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Description
Insulated Gate Bipolar Transistor
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Datasheet
Datasheet Summary
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The NVG800A75L4DSB is a dual side-cooled half-bridge power module designed for hybrid and electric vehicle traction inverters. It features two 750 V, 800 A FS4 IGBTs in a compact AHPM15-CEC (CASE 100DV) package weighing 75 g. The module operates continuously up to a junction temperature of 175°C, with a 4.2 kV isolation voltage and ultra-low stray inductance of 8 nH. Integrated chip-level temperature and current sensors are included. The device meets UL 94 V-0 flammability standards and is RoHS compliant.

Datasheet Summary
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The NVG800A75L4DSB is a dual side-cooled half-bridge power module designed for hybrid and electric vehicle traction inverters. It features two 750 V, 800 A FS4 IGBTs in a compact AHPM15-CEC (CASE 100DV) package weighing 75 g. The module operates continuously up to a junction temperature of 175°C, with a 4.2 kV isolation voltage and ultra-low stray inductance of 8 nH. Integrated chip-level temperature and current sensors are included. The device meets UL 94 V-0 flammability standards and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - NVG800A75L4DSB - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number NVG800A75L4DSB
Package Type AHPM15-CEC
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