N-Channel MOSFET, 60V, 3A, 120mR, SOT-223 Product overview: NVF3055L108T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVF3055L108T1G can be used for catalog matching and distributor lookup.
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)
MOSFET N-CH 60V 3A SOT223
Manufacturer: ON Semiconductor
Win Source Part Number: 1084127-NVF3055L108T
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 15nC @ 5V
Max Input Capacitance: 440pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 5V
Alternative Parts (Cross-Reference): NTF3055L108T1G; NVF3055L108T3G; BSP320SL6327HTSA1;
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
NVF3055L108T1G, NFET 60V 3A 0.120R
NVF3055L108T1G, NFET 60V 3A 0.120R
NVF3055L108T1G, NFET 60V 3A 0.120R
MOSFET, N-CH, 60V, 3A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.68V; Power Dissipation:2.1W; No. of Pins:4Pins RoHS Compliant: Yes
MOSFET N-CH 60V 3A SOT223
MOSFET N-CH 60V 3A SOT223
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NVF3055L108T1G | NVF3055L108T1GOSCT-ND | 1084127-NVF3055L108T1G | 8058717 | 8058717P | 02AC3820 | NVF3055L108T1G | NVF3055L108T1G | NVF3055L108T1G |
| Product Name | N-Channel 60V 3A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055L108T1G | MOSFETs | MOSFETs | Mosfet, N-Ch, 60V, 3A, Sot-223; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 1300 milliwatts | 1300 milliwatts | 2100 milliwatts | 1300 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-261-4, TO-261AA | SOT3; SOT-223 | SOT223; Sot-223 | SOT223; SOT-223 | TO-3; SOT223 | TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | ||
| Transistor Grade / Operating Range | Automotive |
