onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055-100T1G NVF3055-100T1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084126-NVF3055-100T 1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 455pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084126-NVF3055-100T 1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 455pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055-100T1G - 1084126-NVF3055-100T1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055-100T1G
1084126-NVF3055-100T1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055-100T1G 1084126-NVF3055-100T1G
Manufacturer: ON Semiconductor Win Source Part Number: 1084126-NVF3055-100T 1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 455pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084126-NVF3055-100T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 455pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now
Singapore, Singapore
N-Channel 60V 3A MOSFET Transistor
278-NVF3055-100T1G
N-Channel 60V 3A MOSFET Transistor 278-NVF3055-100T1G
N-Channel JFET, 60V, 3A, 110mΩ, SOT-223-4 Product overview: NVF3055-100T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVF3055-100T1G can be used for catalog matching and distributor lookup.

N-Channel JFET, 60V, 3A, 110mΩ, SOT-223-4 Product overview: NVF3055-100T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVF3055-100T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NVF3055-100T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVF3055-100T1GOSTR-ND
Single FETs, MOSFETs NVF3055-100T1GOSTR-ND
N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)

N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261)

Buy Now Datasheet
Single FETs, MOSFETs - NVF3055-100T1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVF3055-100T1G
Single FETs, MOSFETs NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

MOSFET N-CH 60V 3A SOT223

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVF3055-100T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVF3055-100T1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVF3055-100T1G
MOSFET N-CH 60V 3A SOT223

MOSFET N-CH 60V 3A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET 60V 3A 0.100R

MOSFET NFET 60V 3A 0.100R

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1084126-NVF3055-100T1G 278-NVF3055-100T1G NVF3055-100T1GOSTR-ND NVF3055-100T1G NVF3055-100T1G NVF3055-100T1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF3055-100T1G N-Channel 60V 3A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 1300 milliwatts 1300 milliwatts 1300 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; SOT-223 TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA TO-261-4, TO-261AA
Unlock Full Specs
to access all available technical data