MOSFET P-CH 60V 2.6A SOT223
P-Channel MOSFET -60V, -2.6A, 170mΩ SOT-223 Product overview: NVF2955T1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVF2955T1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 041983-NVF2955T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Family Name: NVF2955
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: SOT-223 (TO-261)
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 14.3nC @ 10V
Max Input Capacitance: 492pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 750mA, 10V
Alternative Parts (Cross-Reference): BSP613P E6327; BSP613PNT; BSP613PH6327XTSA1; DMP6185SEQ-13;
Introduction Date: August 15, 2011
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
P-Channel 60V 2.6A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 60V 2.6A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
P-Channel 60V 2.6A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
MOSFET, P-CH, -60V, -2.6A, SOT-223; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-2.6A; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-4V; Power Dissipation:2.3W; No. of Pins:4PinsRoHS Compliant: Yes
MOSFET P-CH 60V 2.6A SOT223
MOSFET PFET SOT223 60V 2.6A 140M
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NVF2955T1G | 278-NVF2955T1G | 041983-NVF2955T1G | 488-NVF2955T1GTR-ND | 02AC3819 | NVF2955T1G | NVF2955T1G |
| Product Name | Single FETs, MOSFETs | P-Channel -60V -2.6A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF2955T1G | Single FETs, MOSFETs | Mosfet, P-Ch, -60V, -2.6A, Sot-223; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 2600 milliamps | -2600 milliamps | |||||
| PD | 1000 milliwatts | 2300 milliwatts | 1000 milliwatts | 2300 milliwatts |
