1.7A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261AA, ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN Product overview: NVF2955PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 1.7A, 60V, 0.185ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.7A, 60V, 0.185ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVF2955PT1G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 887869-NVF2955PT1G
Series: Automotive, AEC-Q101
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: P-Channel 60 V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
Package: Reel - TR
Package: TO-261-4, TO-261AA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: NVF295
Categories: Discrete Semiconductor Products
Case / Package: SOT-223 (TO-261)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
MOSFET P CH 60V 1.7A SOT223
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-NVF2955PT1G | 887869-NVF2955PT1G | NVF2955PT1G-ND | NVF2955PT1G |
| Product Name | P-Channel 1.7A 60V 0.185ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVF2955PT1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | |
| PD | 1000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) |