The 1324743-NVE4153NT1G is a single N-Channel MOSFET designed for low-voltage applications, featuring a maximum drain-to-source voltage of 20 V and a continuous drain current rating of 915 mA at 25¬8C. It has a low on-resistance of 230 mOc at 4.5 V and 600 mA, which enhances system efficiency. The device is AEC-Q101 qualified, making it suitable for automotive applications, and it includes ESD protection for the gate. The operating temperature range is extensive, from -55¬8C to 150¬8C, allowing for versatile use in various environments. The MOSFET is packaged in a compact SC-89 form factor, suitable for surface mounting. It is also RoHS3 compliant and available in lead-free packaging. This product is ideal for applications such as load switches, power supply converters, and battery management systems.
MOSFET N-CH 20V 915MA SC89
N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3
N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3
N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3
Manufacturer: onsemi
Win Source Part Number: 1324743-NVE4153NT1G
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 915mA
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 300mW (Tj)
Supplier Device Package: SC-89-3
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Vgs (Max): ±6V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: SC-89, SOT-490
ECCN: EAR99
Fake Threat In the Open Market: 81
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Other Part Number: NVE4153NT1GOSTR,NVE4
Base Product Number: NVE4153
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
RoHS Status: ROHS3 Compliant
N CHANNEL MOSFET, 26V, SC-89-3; Channel Type:N Channel; Drain Source Voltage Vds:26V; Continuous Drain Current Id:915mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:760mV RoHS Compliant: Yes
MOSFET Transistor, N Channel, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV RoHS Compliant: Yes
N CHANNEL MOSFET, 26V, SC-89-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:26V; Continuous Drain Current Id:915mA; On Resistance Rds(on):0.127ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
MOSFET NFET SC89 20V 915MA 230MO
ON SEMICONDUCTOR - NVE4153NT1G - MOSFET-Transistor, n-Kanal, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV
MOSFET N-CH 20V 915MA SC89
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NVE4153NT1G | NVE4153NT1GOSDKR-ND | 1324743-NVE4153NT1G | 30Y7019 | 51Y5007 | 45Y4129 | NVE4153NT1G | 598-NVE4153NT1G | NVE4153NT1G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N Channel Mosfet, 26V, Sc-89-3; Channel Type Onsemi | Mosfet Transistor, N Channel, 915 Ma, 26 V, 0.127 Ohm, 4.5 V, 760 Mv Rohs Compliant Onsemi | N Channel Mosfet, 26V, Sc-89-3; Transistor Polarity Onsemi | MOSFET | ON SEMICONDUCTOR - NVE4153NT1G - MOSFET-Transistor, n-Kanal, 915 mA, 26 V, 0.127 ohm, 4.5 V, 760 mV | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 915 milliamps | 915 milliamps | 915 milliamps | ||||||
| PD | 300 milliwatts | 300 milliwatts | 300 milliwatts |
