onsemi Single FETs, MOSFETs NVD6416ANLT4G-VF01

Description
MOSFET N-CH 100V 19A DPAK-3
Request a Quote Datasheet
Description
MOSFET N-CH 100V 19A DPAK-3
Request a Quote Datasheet

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Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NVD6416ANLT4G-VF01 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NVD6416ANLT4G-VF01
Single FETs, MOSFETs NVD6416ANLT4G-VF01
MOSFET N-CH 100V 19A DPAK-3

MOSFET N-CH 100V 19A DPAK-3

Supplier's Site Datasheet
Singapore
N-Channel 100V 19A DPAK MOSFET Transistor
278-NVD6416ANLT4G-VF01
N-Channel 100V 19A DPAK MOSFET Transistor 278-NVD6416ANLT4G-VF01
N-Channel Power MOSFET 100V, 19A, 74mΩ Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level., 2500-REEL Product overview: NVD6416ANLT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 19A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD6416ANLT4G-VF 01 can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET 100V, 19A, 74mΩ Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level., 2500-REEL Product overview: NVD6416ANLT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 100V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 19A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD6416ANLT4G-VF01 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD6416ANLT4G-VF01 - 1084119-NVD6416ANLT4G-VF01 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD6416ANLT4G-VF01
1084119-NVD6416ANLT4G-VF01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD6416ANLT4G-VF01 1084119-NVD6416ANLT4G-VF01
Manufacturer: ON Semiconductor Win Source Part Number: 1084119-NVD6416ANLT4 G-VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 71W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 19A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 74 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084119-NVD6416ANLT4G-VF01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 71W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 74 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NVD6416ANLT4G-VF01OSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD6416ANLT4G-VF01OSTR-ND
Single FETs, MOSFETs NVD6416ANLT4G-VF01OSTR-ND
N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Single FETs, MOSFETs - NVD6416ANLT4G-VF01OSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD6416ANLT4G-VF01OSCT-ND
Single FETs, MOSFETs NVD6416ANLT4G-VF01OSCT-ND
N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Single FETs, MOSFETs - NVD6416ANLT4G-VF01OSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD6416ANLT4G-VF01OSDKR-ND
Single FETs, MOSFETs NVD6416ANLT4G-VF01OSDKR-ND
N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
NVD6416ANLT4G-VF01
Triode/MOS Tube/Transistor >> MOSFETs NVD6416ANLT4G-VF01
100V 19A 62mΩ@10V,10A 71W 2.2V@250uA N Channel DPAK-3 MOSFETs ROHS

100V 19A 62mΩ@10V,10A 71W 2.2V@250uA N Channel DPAK-3 MOSFETs ROHS

Supplier's Site Datasheet
MOSFET NFET DPAK 100V 19A 81MOHM

MOSFET NFET DPAK 100V 19A 81MOHM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVD6416ANLT4G-VF01 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVD6416ANLT4G-VF01
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVD6416ANLT4G-VF01
MOSFET N-CH 100V 19A DPAK-3

MOSFET N-CH 100V 19A DPAK-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NVD6416ANLT4G-VF01 278-NVD6416ANLT4G-VF01 1084119-NVD6416ANLT4G-VF01 NVD6416ANLT4G-VF01OSTR-ND NVD6416ANLT4G-VF01 NVD6416ANLT4G-VF01 NVD6416ANLT4G-VF01
Product Name Single FETs, MOSFETs N-Channel 100V 19A DPAK MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD6416ANLT4G-VF01 Single FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 19000 milliamps
PD 71000 milliwatts 71000 milliwatts 71000 milliwatts
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