onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NVD6415ANLT4G

Description
Manufacturer: onsemi Win Source Part Number: 1325388-NVD6415ANLT4 G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Supplier Device Package: DPAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 2832-NVD6415ANLT4G-4 88,2832-NVD6415ANLT4 GTR,NVD6415ANLT4G-VF 01-ND,2156-NVD6415AN LT4G,ONSONSNVD6415AN LT4G,NVD6415ANLT4G-V F01 Base Product Number: NVD641 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant
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Description
Manufacturer: onsemi Win Source Part Number: 1325388-NVD6415ANLT4 G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Supplier Device Package: DPAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 2832-NVD6415ANLT4G-4 88,2832-NVD6415ANLT4 GTR,NVD6415ANLT4G-VF 01-ND,2156-NVD6415AN LT4G,ONSONSNVD6415AN LT4G,NVD6415ANLT4G-V F01 Base Product Number: NVD641 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325388-NVD6415ANLT4G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325388-NVD6415ANLT4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325388-NVD6415ANLT4G
Manufacturer: onsemi Win Source Part Number: 1325388-NVD6415ANLT4 G Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 2,500 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 83W (Tc) Supplier Device Package: DPAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63 ECCN: EAR99 Fake Threat In the Open Market: 66 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 2832-NVD6415ANLT4G-4 88,2832-NVD6415ANLT4 GTR,NVD6415ANLT4G-VF 01-ND,2156-NVD6415AN LT4G,ONSONSNVD6415AN LT4G,NVD6415ANLT4G-V F01 Base Product Number: NVD641 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325388-NVD6415ANLT4G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 2,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 83W (Tc)
Supplier Device Package: DPAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-252-3, DPak (2 Leads + Tab), SC-63
ECCN: EAR99
Fake Threat In the Open Market: 66
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 2832-NVD6415ANLT4G-488,2832-NVD6415ANLT4GTR,NVD6415ANLT4G-VF01-ND,2156-NVD6415ANLT4G,ONSONSNVD6415ANLT4G,NVD6415ANLT4G-VF01
Base Product Number: NVD641
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1325388-NVD6415ANLT4G NVD6415ANLT4G-ND NVD6415ANLT4G
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
PD 83000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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