Power MOSFET 40V, 123A, 3.7 mOhm, Single N Channel, DPAK, Logic Level. T4G, DPAK (SINGLE GAUGE) TO-252, 2500-REEL Product overview: NVD5890NLT4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 123A, 3.7 mOhm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 123A, 3.7 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD5890NLT4G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 209383-NVD5890NLT4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4W (Ta), 107W (Tc)
Family Name: NVD5890NL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 24A (Ta), 123A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 42nC @ 4.5V
Max Input Capacitance: 4760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): TSM051N04LCP ROG; TSM038N04LCP ROG; AUIRFR8403TRR; AUIRFR8403TR;
ECCN: EAR99
Country of Origin: Malaysia, Vietnam
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-NVD5890NLT4G | 209383-NVD5890NLT4G | NVD5890NLT4GOSTR-ND | NVD5890NLT4G | NVD5890NLT4G |
| Product Name | N-Channel 40V 123A 3.7 mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5890NLT4G | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 107000 milliwatts | 4000 to 107000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 40 volts |