onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G-VF01 NVD5807NT4G-VF01

Manufacturer: ON Semiconductor
Win Source Part Number: 1084112-NVD5807NT4G-VF01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 603pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Single N-Channel Power MOSFET 40V, 23A, 31mΩ, 2500-REEL Product overview: NVD5807NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD5807NT4G-VF01 can be used for catalog matching and distributor lookup.

N-Channel 40V 23A (Tc) 33W (Tj) Surface Mount DPAK