onsemi Single FETs, MOSFETs NVD5807NT4G-VF01

Description
N-Channel 40V 23A (Tc) 33W (Tj) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 40V 23A (Tc) 33W (Tj) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NVD5807NT4G-VF01TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVD5807NT4G-VF01TR-ND
Single FETs, MOSFETs NVD5807NT4G-VF01TR-ND
N-Channel 40V 23A (Tc) 33W (Tj) Surface Mount DPAK

N-Channel 40V 23A (Tc) 33W (Tj) Surface Mount DPAK

Buy Now Datasheet
Singapore
N-Channel 40V 23A MOSFET Transistor
278-NVD5807NT4G-VF01
N-Channel 40V 23A MOSFET Transistor 278-NVD5807NT4G-VF01
Single N-Channel Power MOSFET 40V, 23A, 31mΩ, 2500-REEL Product overview: NVD5807NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD5807NT4G-VF01 can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 40V, 23A, 31mΩ, 2500-REEL Product overview: NVD5807NT4G-VF01 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVD5807NT4G-VF01 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G-VF01 - 1084112-NVD5807NT4G-VF01 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G-VF01
1084112-NVD5807NT4G-VF01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G-VF01 1084112-NVD5807NT4G-VF01
Manufacturer: ON Semiconductor Win Source Part Number: 1084112-NVD5807NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 603pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1084112-NVD5807NT4G-VF01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 603pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 31 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFET NFET DPAK 40V 23A 31MOHM

MOSFET NFET DPAK 40V 23A 31MOHM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVD5807NT4G-VF01 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVD5807NT4G-VF01
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVD5807NT4G-VF01
MOSFET N-CH 40V 23A DPAK

MOSFET N-CH 40V 23A DPAK

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NVD5807NT4G-VF01TR-ND 278-NVD5807NT4G-VF01 1084112-NVD5807NT4G-VF01 NVD5807NT4G-VF01 NVD5807NT4G-VF01
Product Name Single FETs, MOSFETs N-Channel 40V 23A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5807NT4G-VF01 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
TJ -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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