onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5414NT4G-VF01 NVD5414NT4G-VF01

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084105-NVD5414NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084105-NVD5414NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5414NT4G-VF01 - 1084105-NVD5414NT4G-VF01 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5414NT4G-VF01
1084105-NVD5414NT4G-VF01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5414NT4G-VF01 1084105-NVD5414NT4G-VF01
Manufacturer: ON Semiconductor Win Source Part Number: 1084105-NVD5414NT4G- VF01 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1084105-NVD5414NT4G-VF01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVD5414NT4G-VF01 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVD5414NT4G-VF01
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1084105-NVD5414NT4G-VF01 488-NVD5414NT4G-VF01TR-ND NVD5414NT4G-VF01 NVD5414NT4G-VF01
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVD5414NT4G-VF01 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 55000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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