SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
| ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | NVBG070N120M3S | 5556-NVBG070N120M3STR-ND | NVBG070N120M3S |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | SiC (Silicon Carbide Junction Transistor) | Silicon Carbide | |
| V(BR)DSS | 1200 volts | ||
| IDSS | 36000 milliamps | ||
| PD | 172000 milliwatts |
