SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
SILICON CARBIDE (SIC) MOSFET-ELI
| DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 5556-NVBG070N120M3STR-ND | NVBG070N120M3S | NVBG070N120M3S |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | Silicon Carbide | SiC (Silicon Carbide Junction Transistor) | |
| Package Type | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Transistor Grade / Operating Range | Automotive | ||
| V(BR)DSS | 1200 volts |
