Win Source Part Number: 1338628-NVBG040N120S
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 800
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 357W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab) , TO-263CA
Supplier Device Package: D2PAK-7
Vgs (Max): +25V, -15V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NVBG040
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
SiC MOSFET, N-Ch, 1200V, 40mΩ, D2PAK-7L Product overview: NVBG040N120SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVBG040N120SC1 can be used for catalog matching and distributor lookup.
TRANS SJT N-CH 1200V 60A D2PAK-7
N-Channel 1200V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7
N-Channel 1200V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7
N-Channel 1200V 60A (Tc) 357W (Tc) Surface Mount D2PAK-7
MOSFET, N-CH, 1.2KV, 60A, TO-263HV ROHS COMPLIANT: YES
TRANS SJT N-CH 1200V 60A D2PAK-7
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1338628-NVBG040N120SC1 | 278-NVBG040N120SC1 | NVBG040N120SC1 | 5556-NVBG040N120SC1DKR-ND | 74AH4856 | NVBG040N120SC1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | 1200V MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 1.2Kv, 60A, To-263Hv Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | SOT3 | TO-263; TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-3; TO-263 | TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Transistor Technology / Material | SiCFET (Silicon Carbide) | Silicon Carbide | ||||
| V(BR)DSS | 1200 volts |
