onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB60N06T4G NVB60N06T4G

Manufacturer: ON Semiconductor
Win Source Part Number: 1084083-NVB60N06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 150W (Tj)
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 81nC @ 10V
Max Input Capacitance: 3220pF @ 25V
Maximum Rds On at Id,Vgs: 14 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient

N-Channel 60V 60A (Ta) 2.4W (Ta), 150W (Tj) Surface Mount D²PAK

N-Channel Power MOSFET 60V, 60A, 14mΩ Power MOSFET 60V 60A 14 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NVB60N06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVB60N06T4G can be used for catalog matching and distributor lookup.