onsemi Single FETs, MOSFETs NVB25P06T4G

Description
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
Request a Quote Datasheet
Description
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - NVB25P06T4GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NVB25P06T4GOSTR-ND
Single FETs, MOSFETs NVB25P06T4GOSTR-ND
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK

P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G - 1084080-NVB25P06T4G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G
1084080-NVB25P06T4G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G 1084080-NVB25P06T4G
Manufacturer: ON Semiconductor Win Source Part Number: 1084080-NVB25P06T4G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 120W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 27.5A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 1680pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 82 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084080-NVB25P06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 82 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NVB25P06T4G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NVB25P06T4G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NVB25P06T4G
MOSFET P-CH 60V 27.5A D2PAK

MOSFET P-CH 60V 27.5A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NVB25P06T4GOSTR-ND 1084080-NVB25P06T4G NVB25P06T4G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Transistor Grade / Operating Range Automotive
V(BR)DSS 60 volts
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