Manufacturer: ON Semiconductor
Win Source Part Number: 1084080-NVB25P06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 82 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK
MOSFET P-CH 60V 27.5A D2PAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1084080-NVB25P06T4G | NVB25P06T4GOSTR-ND | NVB25P06T4G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |
| V(BR)DSS | 60 volts | ||
| PD | 120000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
