onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NVB25P06T4G NVB25P06T4G

Manufacturer: ON Semiconductor
Win Source Part Number: 1084080-NVB25P06T4G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 120W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 27.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 1680pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 82 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

P-Channel Power MOSFET -60V, -27.5A, 82mΩ Power MOSFET -60V -27.5A 82 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL Product overview: NVB25P06T4G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -27.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -27.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NVB25P06T4G can be used for catalog matching and distributor lookup.

P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK