Win Source Part Number: 1356346-NVB190N65S3F
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Series: Automotive, AEC-Q101, SuperFET® III
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK-3 (TO-263-3)
Base Product Number: NVB190
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Power Dissipation (Max): 162W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N-Channel 650V 20A (Tc) 162W (Tc) Surface Mount D²PAK-3 (TO-263-3)
N-Channel 650V 20A (Tc) 162W (Tc) Surface Mount D²PAK-3 (TO-263-3)
N-Channel 650V 20A (Tc) 162W (Tc) Surface Mount D²PAK-3 (TO-263-3)
MOSFET N-CH 650V 20A D2PAK-3
MOSFET N-CH 650V 20A D2PAK-3
MOSFET, N-CH, 650V, 20A, TO-263 ROHS COMPLIANT: YES
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1356346-NVB190N65S3F | 1952667P | 1952666 | 488-NVB190N65S3FCT-ND | NVB190N65S3F | NVB190N65S3F | 41AH2118 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 20A, To-263 Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 162000 milliwatts | 162000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; SOT3 | D2PAK | TO-263; D2PAK (TO-263) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) |
| MOSFET Operating Mode | Enhancement | Enhancement |
