onsemi Memory NV25040DWHFT3G

Description
Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC
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Description
Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The NV25040DWHFT3G is a 4 Kbit EEPROM memory device from Lingto Electronic Limited, designed for automotive applications with an operating temperature range of -40¬8C to +150¬8C. It is organized as 512x8 bits and supports the Serial Peripheral Interface (SPI) protocol with a maximum clock frequency of 10 MHz. The device features a 16-byte page write buffer, allowing for efficient data writing. This EEPROM includes both hardware and software write protection mechanisms, including block write protection options for 1/4, 1/2, or the entire memory array. It also incorporates on-chip Error Correction Code (ECC) to enhance data reliability by correcting single-bit errors. The NV25040DWHFT3G operates with a supply voltage range of 2.5 V to 5.5 V and has a data retention capability of up to 200 years. The device is available in both SOIC and TSSOP 8-lead packages and is compliant with RoHS standards, being Pb-free and halogen-free. Its endurance ratings indicate it can withstand up to 600,000 write cycles at 125¬8C and 300,000 cycles at 150¬8C, making it suitable for high-reliability applications.

Datasheet Summary
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The NV25040DWHFT3G is a 4 Kbit EEPROM memory device from Lingto Electronic Limited, designed for automotive applications with an operating temperature range of -40¬8C to +150¬8C. It is organized as 512x8 bits and supports the Serial Peripheral Interface (SPI) protocol with a maximum clock frequency of 10 MHz. The device features a 16-byte page write buffer, allowing for efficient data writing. This EEPROM includes both hardware and software write protection mechanisms, including block write protection options for 1/4, 1/2, or the entire memory array. It also incorporates on-chip Error Correction Code (ECC) to enhance data reliability by correcting single-bit errors. The NV25040DWHFT3G operates with a supply voltage range of 2.5 V to 5.5 V and has a data retention capability of up to 200 years. The device is available in both SOIC and TSSOP 8-lead packages and is compliant with RoHS standards, being Pb-free and halogen-free. Its endurance ratings indicate it can withstand up to 600,000 write cycles at 125¬8C and 300,000 cycles at 150¬8C, making it suitable for high-reliability applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - NV25040DWHFT3GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Buy Now Datasheet
Memory - NV25040DWHFT3GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Buy Now Datasheet
Memory - NV25040DWHFT3GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Memory IC 4Kb (512 x 8) SPI 10MHz 40ns 8-SOIC

Buy Now Datasheet
 - NV25040DWHFT3G - Rochester Electronics
Newburyport, MA, United States
NV25040 - EEPROM Serial 4-Kb SPI - Automotive Grade 0

NV25040 - EEPROM Serial 4-Kb SPI - Automotive Grade 0

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NV25040DWHFT3G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NV25040DWHFT3G
Integrated Circuits (ICs) - Memory - Memory NV25040DWHFT3G
IC EEPROM 4KBIT SPI 10MHZ 8SOIC

IC EEPROM 4KBIT SPI 10MHZ 8SOIC

Supplier's Site
Memory - NV25040DWHFT3G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC 4Kbit SPI 10 MHz 40 ns 8-SOIC

Memory IC 4Kbit SPI 10 MHz 40 ns 8-SOIC

Buy Now Datasheet
IC EEPROM 4KBIT SPI 10MHZ 8SOIC

IC EEPROM 4KBIT SPI 10MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number NV25040DWHFT3GOSCT-ND NV25040DWHFT3G NV25040DWHFT3G NV25040DWHFT3G NV25040DWHFT3G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC; SOIC-8 SOIC SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 2.5V ~ 5.5V -40degC ~ 150degC (TA) 2.5V ~ 5.5V
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