onsemi Single FETs, MOSFETs NTZS3151PT1H

Description
P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563
Request a Quote Datasheet
Description
P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTZS3151PT1H-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTZS3151PT1H-ND
Single FETs, MOSFETs NTZS3151PT1H-ND
P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563

P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZS3151PT1H - 1084052-NTZS3151PT1H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZS3151PT1H
1084052-NTZS3151PT1H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZS3151PT1H 1084052-NTZS3151PT1H
Manufacturer: ON Semiconductor Win Source Part Number: 1084052-NTZS3151PT1H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 170mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.6nC @ 4.5V Max Input Capacitance: 458pF @ 16V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084052-NTZS3151PT1H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 170mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 860mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.6nC @ 4.5V
Max Input Capacitance: 458pF @ 16V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 150 mOhm @ 950mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-NTZS3151PT1H
MOSFET Transistor 278-NTZS3151PT1H
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Product overview: NTZS3151PT1H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTZS3151PT1H can be used for catalog matching and distributor lookup.

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Product overview: NTZS3151PT1H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTZS3151PT1H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZS3151PT1H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZS3151PT1H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZS3151PT1H
MOSFET P-CH 20V 860MA SOT563-6

MOSFET P-CH 20V 860MA SOT563-6

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PFET SOT563 20V 950MA TR

MOSFET PFET SOT563 20V 950MA TR

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTZS3151PT1H-ND 1084052-NTZS3151PT1H 278-NTZS3151PT1H NTZS3151PT1H NTZS3151PT1H
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZS3151PT1H MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type SOT-563, SOT-666 SOT3; SOT-563-6 SOT-563, SOT-666
V(BR)DSS 20 volts
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