onsemi FET, MOSFET Arrays NTZD5110NT5G

Description
MOSFET 2N-CH 60V 0.294A SOT563
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Description
MOSFET 2N-CH 60V 0.294A SOT563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTZD5110NT5G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTZD5110NT5G
FET, MOSFET Arrays NTZD5110NT5G
MOSFET 2N-CH 60V 0.294A SOT563

MOSFET 2N-CH 60V 0.294A SOT563

Supplier's Site Datasheet
Singapore
N-Channel Dual 60V 310mA MOSFET Transistor
289-NTZD5110NT5G
N-Channel Dual 60V 310mA MOSFET Transistor 289-NTZD5110NT5G
Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω, SOT-563, 6 LEAD, 8000-REEL Product overview: NTZD5110NT5G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 310mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 310mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD5110NT5G can be used for catalog matching and distributor lookup.

Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω, SOT-563, 6 LEAD, 8000-REEL Product overview: NTZD5110NT5G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 60V, 310mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 60V, 310mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD5110NT5G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD5110NT5G - 060713-NTZD5110NT5G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD5110NT5G
060713-NTZD5110NT5G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD5110NT5G 060713-NTZD5110NT5G
Manufacturer: ON Semiconductor Win Source Part Number: 060713-NTZD5110NT5G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 294mA Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 0.7nC @ 4.5V Max Input Capacitance: 24.5pF @ 20V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060713-NTZD5110NT5G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 294mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.7nC @ 4.5V
Max Input Capacitance: 24.5pF @ 20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - NTZD5110NT5G-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD5110NT5G-ND
FET, MOSFET Arrays NTZD5110NT5G-ND
Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Surface Mount SOT-563

Mosfet Array 2 N-Channel (Dual) 60V 294mA 250mW Surface Mount SOT-563

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZD5110NT5G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZD5110NT5G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZD5110NT5G
MOSFET 2N-CH 60V 0.294A SOT563

MOSFET 2N-CH 60V 0.294A SOT563

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number NTZD5110NT5G 289-NTZD5110NT5G 060713-NTZD5110NT5G NTZD5110NT5G-ND NTZD5110NT5G
Product Name FET, MOSFET Arrays N-Channel Dual 60V 310mA MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD5110NT5G FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 294 milliamps
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