onsemi P-Channel 20V 430MA MOSFET Transistor NTZD3158PT1G

Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,20V V(BR)DSS,430MA I(D),SOT-563 Product overview: NTZD3158PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 20V, 430MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 430MA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD3158PT1G can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 060712-NTZD3158PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 175pF @ 16V
Maximum Rds On at Id,Vgs: 900 mOhm @ 430mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient