onsemi FET, MOSFET Arrays NTZD3155CT5G

Description
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Request a Quote Datasheet
Description
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - NTZD3155CT5G-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3155CT5G-ND
FET, MOSFET Arrays NTZD3155CT5G-ND
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT5G - 1084050-NTZD3155CT5G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT5G
1084050-NTZD3155CT5G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT5G 1084050-NTZD3155CT5G
Manufacturer: ON Semiconductor Win Source Part Number: 1084050-NTZD3155CT5G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NTZD3155C Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 540mA, 430mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 2.5nC @ 4.5V Max Input Capacitance: 150pF @ 16V Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V Alternative Parts (Cross-Reference): AO5600E; DMC2450UV-7; CMLDM3757 TR Lead Free; CMLDM3757 TR Tin/Lead; Introduction Date: July 08, 2004 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 1084050-NTZD3155CT5G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTZD3155C
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 540mA, 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 150pF @ 16V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Alternative Parts (Cross-Reference): AO5600E; DMC2450UV-7; CMLDM3757 TR Lead Free; CMLDM3757 TR Tin/Lead;
Introduction Date: July 08, 2004
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
FET, MOSFET Arrays - NTZD3155CT5G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTZD3155CT5G
FET, MOSFET Arrays NTZD3155CT5G
MOSFET N/P-CH 20V SOT-563

MOSFET N/P-CH 20V SOT-563

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZD3155CT5G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZD3155CT5G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZD3155CT5G
MOSFET N/P-CH 20V SOT563

MOSFET N/P-CH 20V SOT563

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTZD3155CT5G-ND 1084050-NTZD3155CT5G NTZD3155CT5G NTZD3155CT5G
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT5G FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-563, SOT-666 SOT3; SOT-563 SOT-563, SOT-666
Polarity P-Channel P-Channel; N and P-Channel
V(BR)DSS 20 volts 20 volts
PD 250 milliwatts
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